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irfB17N60K 11/19/02 www.irf.com 1 smps mosfet hexfet power mosfet v dss r ds(on) typ. i d 600v 0.35 ? 17a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 17 i d @ t c = 100c continuous drain current, v gs @ 10v 11 a i dm pulsed drain current 68 p d @t c = 25c power dissipation 340 w linear derating factor 2.7 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 11 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 screw 10 n absolute maximum ratings to - 220ab switch mode power supply (smps) uninterruptible power supply high speed power switching hard switched and high frequency circuits benefits applications smaller to-220 package low gate charge qg results in simple drive requirement improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche voltage and current symbol parameter typ. max. units e as single pulse avalanche energy ??? 330 mj i ar avalanche current ??? 17 a e ar repetitive avalanche energy ??? 34 mj avalanche characteristics symbol parameter typ. max. units r jc junction-to-case ??? 0.37 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 58 thermal resistance pd - 94578

2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 17a, v gs = 0v t rr reverse recovery time ??? 520 780 ns t j = 25c, i f = 17a q rr reverse recoverycharge ??? 5620 8430 nc di/dt = 100a/s t rr reverse recovery time ??? 580 870 ns t j = 125c, i f = 17a q rr reverse recoverycharge ??? 6470 9700 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.60 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 0.35 0.42 ? v gs = 10v, i d = 10a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 50 a v ds = 600v, v gs = 0v ??? ??? 250 a v ds = 480v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 2.3mh, r g = 25 ? , i as = 17a, i sd 17a, di/dt 380a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle 2%. symbol parameter min. typ. max. units conditions g fs forward transconductance 5.9 ??? ??? s v ds = 50v, i d = 10a q g total gate charge ??? ??? 99 i d = 17a q gs gate-to-source charge ??? ??? 32 nc v ds = 480v q gd gate-to-drain ("miller") charge ??? ??? 47 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 25 ??? v dd = 300v t r rise time ??? 82 ??? i d = 17a t d(off) turn-off delay time ??? 38 ??? r g = 7.5 ? t f fall time ??? 32 ??? v gs = 10v,see fig. 10 c iss input capacitance ??? 2700 ??? v gs = 0v c oss output capacitance ??? 240 ??? v ds = 25v c rss reverse transfer capacitance ??? 21 ??? pf ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 2950 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 67 ??? v gs = 0v, v ds = 480v, ? = 1.0mhz c oss eff. effective output capacitance ??? 120 ??? v gs = 0v, v ds = 0v to 480v ns s d g diode characteristics 17 68

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.5v 20s pulse width tj = 25c vgs top 15v 10v 8.0v 7.5v 7.0v 6.5v 6.0v bottom 5.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.5v 20s pulse width tj = 150c vgs top 15v 10v 8.0v 7.5v 7.0v 6.5v 6.0v bottom 5.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 17a v gs = 10v 5.0 6.0 7.0 8.0 9.0 10.0 11.0 v gs , gate-to-source voltage (v) 0.0 0.1 1.0 10.0 100.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 100v 20s pulse width

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20406080100 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 480v vds= 300v vds= 120v i d = 17a 0.0 0.5 1.0 1.5 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 10000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 t j , junction temperature (c) 0 2 4 6 8 10 12 14 16 18 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response )

6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13a. gate charge test circuit fig 13b. basic gate charge waveform fig 12a. maximum avalanche energy vs. drain current fig 12d. unclamped inductive waveforms fig 12c. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.6a 11a bottom 17a

www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
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8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/02 lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs.

dimensions are shown in millimeters (inches) part number international rectifier logo example : this is an irf 1010 with assembly lot code 9b1m assembly lot code date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a to-220ab package is not recommended for surface mount application

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